High purity InP polycrystal
An ideal material for single crystal growth.
Method:
Synthesized by high pressure furnace.
Dimension (standard):
| Diameter: 50mm Max. length: 100mm | Diameter: 75mm Max. length: 150mm |
Grain size:
Approx. 5-10mm² (typical)
Electrical property:
| Carrier concentration | 3 × 1015 - 1 × 1016cm-3 |
| Mobility | 3700 - 4500cm2/v.s. |
Impurity:
Typical glow discharge mass spectrographic.
| Element | ppb at | Element | ppb at | Element | ppb at | Element | ppb at | Element | ppb at |
|---|---|---|---|---|---|---|---|---|---|
| Li | 23 | Ca | <5 | Y | <0.1 | Ba | <0.1 | Hf | <0.1 |
| Be | <1 | Sc | <0.1 | Zr | <0.1 | La | <0.1 | Ta * | <50 |
| B | 1.3 | Ti | <0.1 | Nb | <5 | Ce | <0.1 | W | <0.2 |
| F | <2 | Fe | 0.17 | Mo | <0.5 | Pr | <0.3 | Re | <0.1 |
| Na | <1 | Co | <0.1 | Ru | <0.1 | Nd | <0.3 | Os | <0.1 |
| Mg | 4.5 | Ni | <0.2 | Rh | <0.1 | Sm | <0.3 | Ir | <0.1 |
| Al | 0.16 | Cu | 5.7 | Pd | <0.7 | Eu | <3 | Pt | <0.2 |
| Si | 15 | Zn | 20 | Ag | <5 | Gd | <0.3 | Au | <2 |
| P | Matrix | Ga | 30 | Cd | <5 | Tb | <0.1 | Hg | <0.5 |
| S | 48 | Ge | <1 | In | Matrix | Dy | <0.3 | Tl | <0.1 |
| Cl | 3.1 | As | 30 | Sn | <1 | Ho | <0.1 | Pb | <0.1 |
| K | <2 | Se | <3 | Sb | <0.3 | Er | <0.3 | Bi | <0.1 |
| Ca | <5 | Br | <5 | Te | <0.3 | Tm | <0.1 | Th | <0.05 |
| Sc | <0.1 | Rb | <0.1 | I | <0.1 | Yb | <0.3 | U | <0.05 |
| Ti | <0.1 | Sr | <0.1 | Cs | <5 | Lu | <0.1 |
Note: * ion source material
Note: Electrical properties are measured on the ingot basis.
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