High purity InP polycrystal

An ideal material for single crystal growth.

Method:
Synthesized by high pressure furnace.

Dimension (standard):

Diameter: 50mm
Max. length: 100mm

Diameter: 75mm
Max. length: 150mm

Grain size:
Approx. 5-10mm² (typical)

Electrical property:

Carrier concentration	3 × 10¹⁵- 1 × 10¹⁶cm^-3
Mobility	3700 - 4500cm²/v.s.

Impurity:
Typical glow discharge mass spectrographic.

Element	ppb at	Element	ppb at	Element	ppb at	Element	ppb at	Element	ppb at
Li	23	Ca	<5	Y	<0.1	Ba	<0.1	Hf	<0.1
Be	<1	Sc	<0.1	Zr	<0.1	La	<0.1	Ta *	<50
B	1.3	Ti	<0.1	Nb	<5	Ce	<0.1	W	<0.2
F	<2	Fe	0.17	Mo	<0.5	Pr	<0.3	Re	<0.1
Na	<1	Co	<0.1	Ru	<0.1	Nd	<0.3	Os	<0.1
Mg	4.5	Ni	<0.2	Rh	<0.1	Sm	<0.3	Ir	<0.1
Al	0.16	Cu	5.7	Pd	<0.7	Eu	<3	Pt	<0.2
Si	15	Zn	20	Ag	<5	Gd	<0.3	Au	<2
P	Matrix	Ga	30	Cd	<5	Tb	<0.1	Hg	<0.5
S	48	Ge	<1	In	Matrix	Dy	<0.3	Tl	<0.1
Cl	3.1	As	30	Sn	<1	Ho	<0.1	Pb	<0.1
K	<2	Se	<3	Sb	<0.3	Er	<0.3	Bi	<0.1
Ca	<5	Br	<5	Te	<0.3	Tm	<0.1	Th	<0.05
Sc	<0.1	Rb	<0.1	I	<0.1	Yb	<0.3	U	<0.05
Ti	<0.1	Sr	<0.1	Cs	<5	Lu	<0.1