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Gallium antimonide
Single Crystal Wafers
GaSb is a semiconductor used in the production of optoelectronic devices such as lasers, LEDs, and photoreceivers.
| Dopant | Diameter | EPD cm-2 | Carrier concentration cm-3 | Mobility cm2/V.s |
|---|---|---|---|---|
| Si or Ge/P-type | 50.8 ± 0.3 mm | <5 x 103 | 3 x 101719 | 2 x 102 |
| Te/N-type | 50.8 ± 0.3 mm | <5 x 103 | 1 x 1017-18 | 3 x 103 |
| Undoped/P-type | 50.8 ± 0.3 mm | <5 x 103 | =<2 x 1016 | 2 x 103 |
- Growth direction: (111) by LEC
- Orientations: (100), (111) with off orientation
- Surface finish: as-cut, lapped/etched or polished (1 or 2 sides)
- Custom finish: epitaxy quality
- Flats: To SEMI-A or SEMI-B standards
- Thickness: >450 µm ± 20 µm
Polycrystalline gallium antimonide also available.
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