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GaSb is a semiconductor used in the production of optoelectronic devices such as lasers, LEDs, and photoreceivers.
Dopant | Diameter | EPD cm-2 | Carrier concentration cm-3 | Mobility cm2/V.s |
---|---|---|---|---|
Si or Ge/P-type | 50.8 ± 0.3 mm | <5 x 103 | 3 x 101719 | 2 x 102 |
Te/N-type | 50.8 ± 0.3 mm | <5 x 103 | 1 x 1017-18 | 3 x 103 |
Undoped/P-type | 50.8 ± 0.3 mm | <5 x 103 | =<2 x 1016 | 2 x 103 |
Polycrystalline gallium antimonide also available.
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