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Indium arsenide

Single crystal wafers

Melting point: 943°C Lattice constant: 6.06 A°
Absorption edge: 3.7 µ Energy gap: 0.42 ev
Density: 5.66 g/cc Dielectric constant: 14.0
Refractive index: 3.42    

 

Dopant Diameter mm EPD cm-2 Carrier concentration cm-3 Mobility cm2/V.sec
Sn/N-type 25 - 50.8 2 x 103-4 5 x 1016-18 -
S/N-type 25 - 50.8 2 x 103-4 5 x 1016-18 -
Zn/P-type 25 - 50.8 2 x 103-4 5 x 1016-19 -
Mn/P-type 25 - 50.8 2 x 103-4 5 x 1016-19 -
Undoped/N-type 25 - 50.8 5 x 103-4 1-3 x 1016-18 3-4 x 104

 

  • Growth direction: (111) by LEC
  • Orientations: (100), (111) ±0.5°
  • Surface finish: as-cut, lapped/etched or polished (1 or 2 sides)
  • Custom finish: epitaxy quality
  • Flats: to SEMI-A or SEMI-B standards
  • Thickness: >= 400 microns ± 20 microns

Polycrystalline indium arsenide also available.


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