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Indium arsenide
Single crystal wafers
| Melting point: | 943°C | Lattice constant: | 6.06 A° |
| Absorption edge: | 3.7 µ | Energy gap: | 0.42 ev |
| Density: | 5.66 g/cc | Dielectric constant: | 14.0 |
| Refractive index: | 3.42 |
| Dopant | Diameter mm | EPD cm-2 | Carrier concentration cm-3 | Mobility cm2/V.sec |
|---|---|---|---|---|
| Sn/N-type | 25 - 50.8 | 2 x 103-4 | 5 x 1016-18 | - |
| S/N-type | 25 - 50.8 | 2 x 103-4 | 5 x 1016-18 | - |
| Zn/P-type | 25 - 50.8 | 2 x 103-4 | 5 x 1016-19 | - |
| Mn/P-type | 25 - 50.8 | 2 x 103-4 | 5 x 1016-19 | - |
| Undoped/N-type | 25 - 50.8 | 5 x 103-4 | 1-3 x 1016-18 | 3-4 x 104 |
- Growth direction: (111) by LEC
- Orientations: (100), (111) ±0.5°
- Surface finish: as-cut, lapped/etched or polished (1 or 2 sides)
- Custom finish: epitaxy quality
- Flats: to SEMI-A or SEMI-B standards
- Thickness: >= 400 microns ± 20 microns
Polycrystalline indium arsenide also available.
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