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Indium arsenide

Single crystal wafers

Melting point:943°CLattice constant:6.06 A°
Absorption edge:3.7 µEnergy gap:0.42 ev
Density:5.66 g/ccDielectric constant:14.0
Refractive index:3.42  

 

DopantDiameter mmEPD cm-2Carrier concentration cm-3Mobility cm2/V.sec
Sn/N-type25 - 50.82 x 103-45 x 1016-18-
S/N-type25 - 50.82 x 103-45 x 1016-18-
Zn/P-type25 - 50.82 x 103-45 x 1016-19-
Mn/P-type25 - 50.82 x 103-45 x 1016-19-
Undoped/N-type25 - 50.85 x 103-41-3 x 1016-183-4 x 104

 

  • Growth direction: (111) by LEC
  • Orientations: (100), (111) ±0.5°
  • Surface finish: as-cut, lapped/etched or polished (1 or 2 sides)
  • Custom finish: epitaxy quality
  • Flats: to SEMI-A or SEMI-B standards
  • Thickness: >= 400 microns ± 20 microns

Polycrystalline indium arsenide also available.


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