fbpx Electronic Materials | Indium Arsenide | Azelis
man fixing solar panels

Indium arsenide

Single crystal wafers

Melting point:943°CLattice constant:6.06 A°
Absorption edge:3.7 µEnergy gap:0.42 ev
Density:5.66 g/ccDielectric constant:14.0
Refractive index:3.42  

 

DopantDiameter mmEPD cm-2Carrier concentration cm-3Mobility cm2/V.sec
Sn/N-type25 - 50.82 x 103-45 x 1016-18-
S/N-type25 - 50.82 x 103-45 x 1016-18-
Zn/P-type25 - 50.82 x 103-45 x 1016-19-
Mn/P-type25 - 50.82 x 103-45 x 1016-19-
Undoped/N-type25 - 50.85 x 103-41-3 x 1016-183-4 x 104

 

  • Growth direction: (111) by LEC
  • Orientations: (100), (111) ±0.5°
  • Surface finish: as-cut, lapped/etched or polished (1 or 2 sides)
  • Custom finish: epitaxy quality
  • Flats: to SEMI-A or SEMI-B standards
  • Thickness: >= 400 microns ± 20 microns

Polycrystalline indium arsenide also available.


Complete this form for a quotation on your chosen product or to receive further information or datasheet (if available).

Contact Electronics

More events
More news
Do you want to be updated on Azelis news and updates?