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Melting point: | 943°C | Lattice constant: | 6.06 A° |
Absorption edge: | 3.7 µ | Energy gap: | 0.42 ev |
Density: | 5.66 g/cc | Dielectric constant: | 14.0 |
Refractive index: | 3.42 |
Dopant | Diameter mm | EPD cm-2 | Carrier concentration cm-3 | Mobility cm2/V.sec |
---|---|---|---|---|
Sn/N-type | 25 - 50.8 | 2 x 103-4 | 5 x 1016-18 | - |
S/N-type | 25 - 50.8 | 2 x 103-4 | 5 x 1016-18 | - |
Zn/P-type | 25 - 50.8 | 2 x 103-4 | 5 x 1016-19 | - |
Mn/P-type | 25 - 50.8 | 2 x 103-4 | 5 x 1016-19 | - |
Undoped/N-type | 25 - 50.8 | 5 x 103-4 | 1-3 x 1016-18 | 3-4 x 104 |
Polycrystalline indium arsenide also available.
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