Event
Indium antimonide
Single crystal wafers
For infra-red detectors
| Formula | InSb | Crystal structure | Polygonal |
| Density, g/cm | 5.8 | Melting point, °C | 523 |
| Lattice, constant, A° | 6.48 | Energy gap, e.v. | 0.17 |
| Refractive index | 3.96 | Dielectric constant | 15.9 |
Standard specifications: N-type
| Dopant | EPD cm-2 | Carrier concentration cm-3(77K) | Mobility cm2/V.sec (77K) |
|---|---|---|---|
| None | <2 x 103 | 8 x 1014 | >6 x 105 |
| Te | <5 x 103 | 2 3 x 1014-15 | >2 x 105 |
Standard specifications: P-type
| Dopant | EPD cm-2 | Carrier concentration cm-3 (77K) |
|---|---|---|
| Ge | <5 x 103 | >1 x 1013-18 |
| Mn | <5 x 103 | >1 x 1013-18 |
- Orientations: (100) & (111) with off-orientations upon requuest
- Surface finish: as-cut, lapped/etched or polished (1 or 2 sides)
- Diameters: 50.8 ± 0.3 mm
- Thickness: >= 450 microns ± 20 microns
Polycrystalline indium antimonide also available.
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