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Indium antimonide

Single crystal wafers

For infra-red detectors

Formula InSb Crystal structure Polygonal
Density, g/cm 5.8 Melting point, °C 523
Lattice, constant, A° 6.48 Energy gap, e.v. 0.17
Refractive index 3.96 Dielectric constant 15.9

 

Standard specifications: N-type

 

Dopant EPD cm-2 Carrier concentration cm-3(77K) Mobility cm2/V.sec (77K)
None <2 x 103 8 x 1014 >6 x 105
Te <5 x 103 2 ­ 3 x 1014-15 >2 x 105

 

Standard specifications: P-type

Dopant EPD cm-2 Carrier concentration cm-3 (77K)
Ge <5 x 103 >1 x 1013-18
Mn <5 x 103 >1 x 1013-18

 

  • Orientations: (100) & (111) with off-orientations upon requuest
  • Surface finish: as-cut, lapped/etched or polished (1 or 2 sides)
  • Diameters: 50.8 ± 0.3 mm
  • Thickness: >= 450 microns ± 20 microns

Polycrystalline indium antimonide also available.


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