Event
Indium antimonide
Single crystal wafers
For infra-red detectors
| Formula | InSb | Crystal structure | Polygonal |
| Density, g/cm | 5.8 | Melting point, °C | 523 |
| Lattice, constant, A° | 6.48 | Energy gap, e.v. | 0.17 |
| Refractive index | 3.96 | Dielectric constant | 15.9 |
Standard specifications: N-type
| Dopant | EPD cm-2 | Carrier concentration cm-3(77K) | Mobility cm2/V.sec (77K) |
|---|---|---|---|
| None | <2 x 103 | 8 x 1014 | >6 x 105 |
| Te | <5 x 103 | 2 3 x 1014-15 | >2 x 105 |
Standard specifications: P-type
| Dopant | EPD cm-2 | Carrier concentration cm-3 (77K) |
|---|---|---|
| Ge | <5 x 103 | >1 x 1013-18 |
| Mn | <5 x 103 | >1 x 1013-18 |
- Orientations: (100) & (111) with off-orientations upon requuest
- Surface finish: as-cut, lapped/etched or polished (1 or 2 sides)
- Diameters: 50.8 ± 0.3 mm
- Thickness: >= 450 microns ± 20 microns
Polycrystalline indium antimonide also available.
Complete this form for a quotation on your chosen product or to receive further information or datasheet (if available).
Contact Electronics
News
20 January 2020
New regional video for Azelis Asia Pacific
Insights
29 October 2019
Fecc interview with Anna Bertona
News