Gallium arsenide

Semi-insulating and semi-conducting GaAs wafers in 2", 3", 100 mm and 150 mm (SI only) diameter. We offer:

• Single and double side polished wafers
• Low and high pressure LEC growth technology
• Comprehensive crystal and wafer characterization
• Bulk material with extremely low residual impurity concentration
• Controlled carbon level for different resistivity ranges
• Highest uniformity of electrical parameters for ion-implantation
• Excellent surface quality for epitaxial growth process (MBE, MOCVD)
• Laser-marking
• Notch option for larger wafer diameters
• Quick order turn-around

Polycrystalline gallium arsenide also available.

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