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Gallium arsenide

Semi-insulating and semi-conducting GaAs wafers in 2", 3", 100 mm and 150 mm (SI only) diameter. We offer:

  • Single and double side polished wafers
  • Low and high pressure LEC growth technology
  • Comprehensive crystal and wafer characterization
  • Bulk material with extremely low residual impurity concentration
  • Controlled carbon level for different resistivity ranges
  • Highest uniformity of electrical parameters for ion-implantation
  • Excellent surface quality for epitaxial growth process (MBE, MOCVD)
  • Laser-marking
  • Notch option for larger wafer diameters
  • Quick order turn-around

Polycrystalline gallium arsenide also available.


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