Semi-insulating and semi-conducting GaAs wafers in 2", 3", 100 mm and 150 mm (SI only) diameter. We offer:
- Single and double side polished wafers
- Low and high pressure LEC growth technology
- Comprehensive crystal and wafer characterization
- Bulk material with extremely low residual impurity concentration
- Controlled carbon level for different resistivity ranges
- Highest uniformity of electrical parameters for ion-implantation
- Excellent surface quality for epitaxial growth process (MBE, MOCVD)
- Notch option for larger wafer diameters
- Quick order turn-around
Polycrystalline gallium arsenide also available.
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