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Gallium phosphide

Single crystal ingots and wafers

Gallium phosphide is used for the manufacture of red and green diodes, among other technologies.

Crystalline structure: Cubic Density: 4.18
Melting point: 1480°C Refractive index: 3.37
Lattice constant: 5.45 A° Thermal conductivity: 1.1 w/cm °C
Energy gap: 2.4 e.V.  

 

Dopant Diameter EPD cm-2 Carrier concentration cm-3 Mobility cm2/V.s
S/n-type 50.8-76.2 mm <2 x 105 1-15 x 1017
5-20 x 1017		 80-130
80-110
Te/n-type 50.8-76.2 mm <2 x 105 1-7 x 1017 100-140
Zn/p-type 50.8-76.2 mm <2 x 105 1-20 x 1017 50-80
Undoped/n-type 50.8-76.2 mm <2 x 105 2-5 x 1016 110-160

 

  • Growth direction: (111) by LEC
  • Orientations: (100) and (111)
  • Lapped polished
  • Cr doping also available
  • Wafers to SEMI-A or SEMI-B standards
  • Our production facilities are ready to produce to your specifications
  • Custom epitaxy

Polycrystalline gallium phosphide also available.


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