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Gallium phosphide
Single crystal ingots and wafers
Gallium phosphide is used for the manufacture of red and green diodes, among other technologies.
| Crystalline structure: | Cubic | Density: | 4.18 |
| Melting point: | 1480°C | Refractive index: | 3.37 |
| Lattice constant: | 5.45 A° | Thermal conductivity: | 1.1 w/cm °C |
| Energy gap: | 2.4 e.V. |
| Dopant | Diameter | EPD cm-2 | Carrier concentration cm-3 | Mobility cm2/V.s |
|---|---|---|---|---|
| S/n-type | 50.8-76.2 mm | <2 x 105 | 1-15 x 1017 5-20 x 1017 | 80-130 80-110 |
| Te/n-type | 50.8-76.2 mm | <2 x 105 | 1-7 x 1017 | 100-140 |
| Zn/p-type | 50.8-76.2 mm | <2 x 105 | 1-20 x 1017 | 50-80 |
| Undoped/n-type | 50.8-76.2 mm | <2 x 105 | 2-5 x 1016 | 110-160 |
- Growth direction: (111) by LEC
- Orientations: (100) and (111)
- Lapped polished
- Cr doping also available
- Wafers to SEMI-A or SEMI-B standards
- Our production facilities are ready to produce to your specifications
- Custom epitaxy
Polycrystalline gallium phosphide also available.
Complete this form for a quotation on your chosen product or to receive further information or datasheet (if available).
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