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Indium phosphide

Single crystal wafers

 

Φ2"

Φ3"

Geometry
Diameter50.0 or 50.8 ± 0.3 mm76.2 ± 0.4 mm
Thickness350 ± 20 µm620 ± 25 µm
Orientation(100) exact or off ± 0.05°(100) exact or off ± 0.05°
FlatsEJEJ or US
OF (011) ± 0.02°16 ± 2 mm22 ± 2 mm
IF (011) ± 1°8 ± 2 mm11 ± 2 mm
Surface finishone or double side polishedone or double side polished
TTV, LTV (1)< 5 µm5-10 µm
Bow, warp< 10 µm< 10 µm
Laser marking (2)upon requestupon request
packagingindividual container under N2individual container under N2
Bulk
- EPD

Fe, Sn

< 30 000< 50 000

S, Zn

< 500< 500 (70% area)
- X ray Diffraction

Fe, Sn

15 ± 2 arc sec16 ± 4 arc sec

S, Zn

12 ± 1arc sec12 ± 1arc sec
Surface
Particulates
     (diameter > 0.3 µm)
< 100< 100
Contaminations

all metallic elements

≈ 0≈ 0

Si content

< 2 1011/cm2< 2 1011/cm2

(1)
TTV: distance between the highest and the lowest point of the surface
LTV: distance between the highest and the lowest point of the surface in a field of special area (15x15mm2).
In both cases, clamped wafer (with vacuum).

(2)
Laser marking

 

Characterization tools

SPECIFICATIONMETHOD
Electrical
Carrier concentration, mobilityHall effect
ResistivitySonogage
Bulk
EPDHuber etch, microscope or mapping
Strain, slip linesX-ray difraction mapping, IR test
Residual impuritiesGDMS, SIMS
Geometry
ThicknessSonogage, micrometer
OrientationX-ray Goniometer
TTV, bowLaser scanning flatness tester
Surface
Overall surface inspectionInterference contrast microscope
RoughnessLaser interferometric microscope
Particulates, hazynessParticulates counter
Residual impurities/Surface contaminationTOF-SIMS

 

CRYSTAL DOPANTELECTRICAL PROPERTIES

DISLOCATION DENSITY
(
Φ2")

Carrier conc.
(cm-3)
Mobility
(cm2 / v.s.)
EPD / guaranteed
(/cm2)
undoped (n)2 - 5 10154000 - 4600< 30000
iron (Fe)ρ > 107Ω.cmN/A< 30000
tin (Sn)1- 5 10181300 - 2100< 30000
sulphur (S)3 - 10 10181300 - 1600< 500
zinc (Zn)3 - 5 101850 - 60< 500

Database

As part of our statistical process control and total quality management program, extensive database recordings the electrical and mechanical properties for every ingot as well as crystal quality and surface analyses of wafers are available.
Φ 4" wafers starting manufacture.

Polycrystalline indium phosphide also available.


Complete this form for a quotation on your chosen product or to receive further information or datasheet (if available).

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